NCV8401A Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

NCV8401A

Self-Protected Low Side Driver with Temperature and Current Limit

ON Semiconductor 

NCV8401A, NCV8401B

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

VDSS

42

V

Drain−to−Gate Voltage Internally Clamped

Gate−to−Source Voltage

(RGS = 1.0 MW)

VDGR

VGS

42

V

"14

V

Drain Current − Continuous

ID

Internally Limited

Total Power Dissipation

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

PD

W

1.1

2.0

Thermal Resistance,

Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

RqJC

RqJA

RqJA

1.6

°C/W

110

60

Single Pulse Drain−to−Source Avalanche Energy

EAS

(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.65 Apk, L = 120 mH, RG = 25 W, TJstart = 150°C) (Note 3)

800

mJ

Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 3.0 W, td = 400 ms)

Operating Junction Temperature

VLD

65

V

TJ

−40 to 150

°C

Storage Temperature

Tstg

−55 to 150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Minimum FR4 PCB, steady state.

2. Mounted onto a 2″ square FR4 board

(1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state).

3. Not subject to production testing.

+

ID

IG

+

VGS

GATE

DRAIN

SOURCE

VDS

−

−

Figure 1. Voltage and Current Convention

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