DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ILD620 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
ILD620
Infineon
Infineon Technologies Infineon
ILD620 Datasheet PDF : 4 Pages
1 2 3 4
FEATURES
• Identical Channel to Channel Footprint
ILD620 Crosses to TLP620-2
ILQ620 Crosses to TLP620-4
• Current Transfer Ratio (CTR) at IF= ±5.0 mA
ILD/Q620: 50% Min.
ILD/Q620GB: 100% Min.
• Saturated Current Transfer Ratio (CTRSAT)
at IF= ±1.0 mA
ILD/Q620: 60% Typ.
ILD/Q620GB: 30% Min.
• High Collector-Emitter Voltage, BVCEO=70 V
• Dual and Quad Packages Feature:
– Reduced Board Space
– Lower Pin and Parts Count
– Better Channel to Channel CTR Match
– Improved Common Mode Rejection
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Isolation Test Voltage from Double Molded
Package
• Underwriters Lab File #E52744
V
DE
VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Forward Current .........................................±60 mA
Surge Current .............................................. ±1.5 A
Power Dissipation ...................................... 100 mW
Derate from 25°C .................................. 1.3 mW/°C
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current ......................................... 50 mA
Collector Current (t <1.0 ms)...................... 100 mA
Power Dissipation ...................................... 150 mW
Derate from 25°C.................................. 2.0 mW/°C
Package
Isolation Test Voltage (t=1.0 sec.) ......... 5300 VRMS
Package Dissipation, ILD620/GB ............. 400 mW
Derate from 25°C............................... 5.33 mW/°C
Package Dissipation, ILQ620/GB............. 500 mW
Derate from 25°C............................... 6.67 mW/°C
Creepage.................................................. 7.0 mm
Clearance ................................................ 7.0 mm
Isolation Resistance
VIO=500 V, TA=25°C............................... 1012
VIO=500 V, TA=100°C............................ 10 11
Storage Temperature .................. –55°C to +150°C
Operating Temperature .............. –55°C to +100°C
Junction Temperature ................................... 100°C
Soldering Temperature
(2.0 mm from case bottom) ...................... 260°C
DUAL CHANNEL ILD620/620GB
QUAD CHANNEL ILQ620/620GB
AC Input Phototransistor
Optocoupler
Dimensions in inches (mm)
pin one ID
.255 (6.48)
.268 (6.81)
4 321
5 678
K=Cathode
A/K 1
8 Collector
A/K 2
7 Emitter
.030 (0.76)
.045 (1.14)
4° typ.
.050 (1.27)
.018 (.46)
.022 (.56)
.379 (9.63)
.390 (9.91)
A/K 3
A/K 4
6 Collector
5 Emitter
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10 °
3°9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
876543 21
9 10 11 12 13 14 15 16
pin
one ID
.255 (6.48)
.265 (6.81)
K=Cathode
A/K 1
A/K 2
A/K 3
A/K 4
A/K 5
A/K 6
16 Collector
15 Emitter
14 Collector
13 Emitter
12 Collector
11 Emitter
.779 (19.77 )
.790 (20.07)
A/K 7
A/K 8
10 Collector
9 Emitter
.030 (.76)
.045 (1.14)
.031(.79)
.300 (7.62)
typ.
4°
.018 (.46)
.022 (.56)
.100 (2.54)typ.
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
.050 (1.27)
10°
typ.
3°9°
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
DESCRIPTION
The ILD/Q620 and ILD/Q620GB are multi-channel input phototransistor
optocouplers that use inverse parallel GaAs IRLED emitters and high gain
NPN silicon phototransistors per channel. These devices are constructed
using over/under leadframe optical coupling and double molded insulation
resulting in a Withstand Test Voltage of 5300 VRMS.
The LED parameters and the linear CTR characteristics combined with the
TRIOS field-effect process make these devices well suited for AC voltage
detection. The ILD/Q620GB with its low IF guaranteed CTRCEsat minimizes
power dissipation of the AC voltage detection network that is placed in
series with the LEDs. Eliminating the phototransistor base connection pro-
vides added electrical noise immunity from the transients found in many
industrial control environments.
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–198
March 9, 2000-20

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]