AT-41532 Ver la hoja de datos (PDF) - Avago Technologies

Número de pieza

componentes Descripción

Fabricante

AT-41532

General Purpose, Low Current NPN Silicon Bipolar Transistor

Avago Technologies 

AT-41532 Absolute Maximum Ratings

Symbol

VEBO

VCBO

VCEO

IC

PT

Tj

TSTG

Parameter

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Power Dissipation[2, 3]

Junction Temperature

Storage Temperature

Absolute

Units

Maximum[1]

V

1.5

V

20

V

12

mA

50

mW

225

°C

150

°C

-65 to 150

Thermal Resistance [2]:

qjc = 350°C/W

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

2. Tmounting surface = 25°C.

3. Derate at 2.86 mW/°C for Tmounting surface

> 72°C.

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions

Units

Min

Typ

Max

hFE

Forward Current Transfer Ratio

VCE = 5 V,

–

IC = 5 mA

30

150

270

ICBO

Collector Cutoff Current

VCB = 3 V

mA

0.2

IEBO

Emitter Cutoff Current

VEB = 1 V

mA

1.0

Characterization Information, TA = 25°C

Symbol

Parameters and Test Conditions

Units

Min

NF

Noise Figure

VCE = 5 V, IC = 5 mA

f = 0.9 GHz

dB

f = 1.8 GHz

f = 2.4 GHz

GA

Associated Gain

VCE = 5 V, IC = 5 mA

f = 0.9 GHz

dB

f = 1.8 GHz

f = 2.4 GHz

P1dB

Power at 1 dB Gain Compression (opt tuning)

f = 0.9 GHz

dBm

VCE = 5 V, IC = 25 mA

G1dB

Gain at 1 dB Gain Compression (opt tuning)

VCE = 5 V, IC = 25 mA

f = 0.9 GHz

dB

IP3

Output Third Order Intercept Point (opt tuning) f = 0.9 GHz

dBm

VCE = 5 V, IC = 25 mA

|S21E|2

Gain in 50 Ω System

VCE = 5 V, IC = 5 mA

f = 0.9 GHz

dB

12.5

f = 2.4 GHz

Typ

1.0

1.4

1.9

15.5

10.5

9.0

14.5

14.5

25

13.25

5.2



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