2SB649L-C-TN3-K Ver la hoja de datos (PDF) - Unisonic Technologies

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2SB649L-C-TN3-K

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

Unisonic Technologies 

2SB649/A

„ TYPICAL CHARACTERISTICS

Typical Output Characteristecs

1.0

-5.5 -4.0

0.8

0.6

-3.-53-.20.5

-2.0

P

D =20W

-1.5

0.4

-1.0

0.2

-0.5mA

IB=0

TC=25°С

0

-10 -20 -30 -40 -50

Collector to Emitter Voltage, VCE (V)

DC Current Transfer Ratio vs.

350

Collector Current

300 VCE=-5VTa=75°С

250

25°С

200

150

-25°С

100

50

1

-1

-10

-100

-1,000

Collector Current, IC (mA)

Base to Emitter Saturation Voltage

vs. Collector Current

-1.2

-1.0 IC=10IB

-0.8

-0.6

TC=-25°С

25°С

75°С

-0.4

-0.2

0

-1 -3 -10 -30 -100 -300 -1000

Collector Current, IC (mA)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

PNP SILICON TRANSISTOR

Typical Transfer Characteristics

-500

VCE=-5V

-100

-10

-1

0 -0.2 -0.4 -0.6 -0.8 -1.0

Base to Emitter Voltage, VBE (V)

Collector to Emitter Saturation

Voltage vs. Collector Current

-1.2

IC=10 IB

-1.0

-0.8

-0.6

-0.4

-0.2

0

-1

T C=75°С

-25°С

-10

-100

-1,000

Collector Current, IC (mA)

Gain Bandwidth Product

vs. Collector Current

-240

VCE=5V

Ta=25°С

-200

-160

-120

-80

-40

0

-10

-30

-100 -300 -1000

Collector Current, IC (mA)

3 of 4

QW-R204-006,G

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