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2SB649L-C-TN3-K

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

Unisonic Technologies 

2SB649/A

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-180

V

2SB649

-120

V

Collector-Emitter Voltage

2SB649A

VCEO

-160

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-1.5

A

Collector Peak Current

lC(PEAK)

-3

A

TO-126/TO-126C

1

W

TO-92/TO-92NL

Collector Power Dissipation

SOT-89

PC

0.6

W

0.5

W

TO-252

2

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector to Base Breakdown Voltage

BVCBO IC=-1mA, IE=0

Collector to Emitter Breakdown

Voltage

2SB649

2SB649A

BVCEO

IC=-10mA, RBE=∞

Emitter to Base Breakdown Voltage

BVEBO IE=-1mA, IC=0

Collector Cut-off Current

ICBO VCB=-160V, IE=0

DC Current Gain

2SB649

hFE1 VCE=-5V, IC=-150mA (note)

hFE2 VCE=-5V, IC=-500mA (note)

2SB649A hFE1 VCE=-5V, IC=-150mA (note)

hFE2 VCE=-5V, IC=-500mA (note)

Collector-Emitter Saturation Voltage

VCE(SAT) IC=-600mA, IB=-50mA

Base-Emitter Voltage

VBE VCE=-5V, IC=-150mA

Current Gain Bandwidth Product

fT VCE=-5V,IC=-150mA

Output Capacitance

Cob VCB=-10V, IE=0, f=1MHz

Note: Pulse test.

MIN TYP MAX UNIT

-180

V

-120

V

-160

-5

V

-10 μA

60

320

30

60

200

30

-1 V

-1.5 V

140

MHz

27

pF

„ CLASSIFICATION OF hFE1

RANGE

2SB649

2SB649A

B

60-120

60-120

RANK

C

100-200

100-200

D

160-320

-

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R204-006,G

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