2SB649 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

2SB649

Silicon PNP transistor in a TO-126 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB649(A)

Rev.F Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Peak Collector Current

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

2SB649

2SB649A

VEBO

IC

ICP

PC

PC(Tc=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

-180

-120

-160

-5.0

-1.5

-3.0

1.0

20

150

-55～150

单位

Unit

V

V

V

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base

Breakdown Voltage

符号

Symbol

VCBO

测试条件

Test Conditions

IC=-1.0mA IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-180

V

Collector to Emitter

Breakdown Voltage

2SB649

VCEO

IC=-10mA

2SB649A

RBE=∞

-120

-160

V

Emitter to Base Breakdown

Voltage

VEBO

IE=-1.0mA IC=0

-5.0

V

Collector Cut-Off Current

ICBO

VCB=-160V IE=0

-10 μA

DC Current Gain

Collector to Emitter

Saturation Voltage

Base to Emitter Saturation

Voltage

hFE(1)

hFE(2)

VCE(sat)

VBE(sat)

VCE=-5.0V IC=-150mA 60

VCE=-5.0V IC=-500mA 30

IC=-500mA IB=-50mA

VCE=-5.0V IC=-150mA

320

-1.0 V

-1.5 V

Transition Frequency

Collector Output

Capacitance

fT

VCE=-5.0V IC=-150mA

140

MHz

Cob

VCB=-10V IE=0

f=1.0MHz

27

pF

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