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componentes Descripción

Fabricante

OPB755T_06

Reflective Object Sensor

Optek Technology 

Type OPB755T

Electrical Characteristics (TA = 25o C unless otherwise noted)

SYMBOL

PARAMETER

Input Diode

VF

Forward Voltage

IR

Reverse Current

Output Phototransistor

V(BR)CEO Collector-Emitter Breakdown Voltage

ICEO Collector Dark Current

Coupled

VCE(SAT) Saturation Voltage

IC(ON)

On-State Collector Current

IC(OFF) Off-State Collector Current

MIN MAX UNITS

TEST CONDITIONS

1.80

100

V IF = 40 mA

µA VR = 2.0 V

30

100

V IC = 100 µA

nA VCE = 10 V, IF = 0, H = 0

0.40

500

375

250

250

V IC = 150 µA, IF = 30 mA, d = 0.22”

µA VCE = 5 V, IF = 30 mA, d = 0.08”(4)

µA VCE = 5 V, IF = 30 mA, d = 0.15”(4)

µA VCE = 5 V, IF = 30 mA, d = 0.22”(4)

nA

IF = 30 mA, VCE = 5 V,(5)

d = 0.08”, 0.15”, 0.22”

Typical Performance Curves

Normalized Collector Current vs.

Object Distance

Normalized to d = .150"

IF = 30 mA

+2σ VCE = 5 V

Average

-2σ

Normalized Ouput Current vs.

Forward Current

Normalized to IF = 30 mA

VCE = 5 V

Average

+2σ

-2σ

Distance to Reflective Surface - Inches

Forward Current - mA

Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396

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