SDR6M-TXV Ver la hoja de datos (PDF) - Solid State Devices, Inc.
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SDR6M-TXV Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR6 __ __ __
│ │ └ Screening 2/
││
__ = Not Screened
││
TX = TX Level
││
TXV = TXV
││
S = S Level
││
│ └ Package Type
│ __ = Axial Leaded
│
└
Family
K = 800V
M = 1000V
SDR6K and SDR6M
6.0 AMPS
800 ─ 1000 VOLTS
90 nsec ULTRA FAST RECTIFIER
FEATURES:
• Ultra Fast Recovery: 90 ns Max @ 25°C 4/
115-120 ns Max @ 100°C 4/
• Single Chip Construction
• PIV to 1000 Volts
• Low Reverse Leakage Current
• Hermetically Sealed
• For High Efficiency Applications
• Metallurgically Bonded
• Replaces Larger DO-4 Rectifiers
• TX, TXV, and S-Level Screening Available
• Available in Surface Mount Versions
MAXIMUM RATINGS 3/
RATING
Peak Repetitive Reverse
Voltage
And
DC Blocking Voltage
SYMBOL
SDR1K
SDR1M
VRRM
VRWM
VR
VALUE
800
1000
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25°C)
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25°C)
Operating & Storage Temperature
Thermal Resistance, Junction to Lead, L = 3/8”
IO
6
IFSM
TOP and TSTG
RθJL
150
-65 to +175
12
NOTES:
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
Axial Leaded
UNIT
Volts
Amp
Amps
°C
°C/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0017B
DOC
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