MDI145-12A3 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

MDI145-12A3

IGBT Modules

IXYS CORPORATION 

MII 145-12 A3 MID 145-12 A3

MDI 145-12 A3

Symbol

V(BR)CES

VGE(th)

ICES

IGES

VCE(sat)

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eon

Eoff

RthJC

RthJS

Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VGE = 0 V

IC = 4 mA, VCE = VGE

VCE = VCES

VCE = 0 V, VGE = ±20 V

IC = 100 A, VGE = 15 V

TJ = 25°C

TJ = 125°C

VCE = 25 V, VGE = 0 V, f = 1 MHz

Inductive load, TJ = 125°C

IC = 100 A, VGE = ±15 V

VCE = 600 V, RG = 6.8 W

with heatsink compound

1200

4.5

V

6.5 V

6 mA

9

mA

±400 nA

2.2 2.7 V

6.5

nF

1

nF

0.5

nF

100

ns

60

ns

600

ns

90

ns

16

mJ

15

mJ

0.18 K/W

0.36

K/W

Dimensions in mm (1 mm = 0.0394")

Reverse Diode (FRED)

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VF

IF

IRM

trr

RthJC

RthJS

IF = 100 A, VGE = 0 V,

IF = 100 A, VGE = 0 V, TJ = 125°C

TC = 25°C

TC = 80°C

IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms

TJ = 125°C, VR = 600 V

with heatsink compound

2.4 2.6 V

1.9 2.0 V

150 A

95 A

62

A

200

ns

0.45 K/W

0.9

K/W

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 1.3 V; R0 = 12.0 mW

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.3 V; R0 = 6.5 mW

Thermal Response

© 2000 IXYS All rights reserved

IGBT (typ.)

Cth1 = 0.25 J/K; Rth1 = 0.175 K/W

Cth2 = 0.58 J/K; Rth2 = 0.004 K/W

Free Wheeling Diode (typ.)

Cth1 = 0.14 J/K; Rth1 = 0.443 K/W

Cth2 = 0.26 J/K; Rth2 = 0.009 K/W

2-4

Share Link: