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Número de pieza
componentes Descripción
2SC5198-OQ Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SC5198-OQ
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
2SC5198-OQ Datasheet PDF : 5 Pages
1
2
3
4
5
2SC5198
10
250
8
I
C
– V
CE
200
150
Common emitter
Tc = 25°C
100
6
50
40
4
30
2
20
IB = 10 mA
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
10
1
0.1
Tc =
−
25°C
Tc = 100°C
Tc = 25°C
0.01
0.01
0.1
1
Common emitter
IC/IB = 10
10
100
Collector current I
C
(A)
Safe Operating Area
30
IC max (pulsed)*
IC max (continuous)
10
1 ms*
10 ms*
5
DC operation
Tc = 25°C
3
100 ms*
1
0.5
0.3
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
0.1
linearly with increase in
temperature.
VCEO max
0.05
23
10
30
100
300
Collector-emitter voltage V
CE
(V)
I
C
– V
BE
10
8
6
4
2
0
0
1000
Tc = 100°C
25°C
−
25°C
Common emitter
VCE = 5 V
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage V
BE
(V)
h
FE
– I
C
Tc = 100°C
100
Tc = 25°C
Tc =
−
25°C
10
1
0.01
Common emitter
VCE = 5 V
0.1
1
10
Collector current I
C
(A)
3
2013-11-01
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