2SC2209 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SC2209

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC2209

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 40V(Min)

·High Collector Power Dissipation

·Complement to Type 2SA963

APPLICATIONS

·Designed for low frequency power amplification.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

1.5

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

3

A

10

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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