LBSS84WT1G Ver la hoja de datos (PDF) - Leshan Radio Company
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LBSS84WT1G Datasheet PDF : 6 Pages
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LESHAN RADIO COMPANY, LTD.
Power MOSFET
130 mAmps, 50 Volts
P–Channel SOT–323
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered
products such as computers, printers, cellular and cordless telephones.
• Energy Efficient
• Miniature SOT–323 Surface Mount Package Saves Board Space
• Pb-Free Package is available.
• S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
3 Drain
LBSS84WT1G
S-LBSS84WT1G
3
1
2
SOT –323
-
1
Gate
2
Source
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
RθJA
PD
RθJA
TJ, Tstg
556
300
2.4
417
–ā55 to
+150
°C/W
mW
mW/°C
°C/W
°C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RθJA
TL
Value
50
± 20
130
520
225
– 55 to
150
556
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
Marking Diagram
PD
PD = Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping
LBSS84WT1G SOT-323 3000/Tape&Reel
S-LBSS84WT1G
LBSS84WT1G
S-LBSS84WT1G
SOT-323
10000/Tape&Reel
Rev .A 1/4
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