2SC4463 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SC4463

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4463

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

30

V

20

V

3

V

50

mA

100

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown

voltage

V(BR)CBO

30

Collector to emitter breakdown V(BR)CEO 20

voltage

Emitter to base breakdown

voltage

V(BR)EBO

3

Collector cutoff current

I CBO

—

Collector to emitter saturation VCE(sat) —

voltage

DC current transfer ratio

hFE

60

Gain bandwidth product

fT

600

Reverse transfer capacitance Cre

—

Conversion gain

Noise figure

Note: Marking is “HC”.

CG

—

NF

—

Typ Max Unit Test conditions

—

—

V

IC = 10 µA, IE = 0

—

—

V

IC = 1 mA, RBE = ∞

—

—

V

IE = 10 µA, IC = 0

—

0.5 µA

VCB = 10 V, IE = 0

—

1.0 V

IC = 20 mA, IB = 4 mA

120 —

1000 —

0.35 0.65

21

—

4.0 —

MHz

pF

dB

dB

VCE = 10 V, IC = 10 mA

VCE = 10 V, IC = 10 mA

VCB = 10 V, IE = 0,

emitter common,

f = 1 MHz

VCC = 12 V, IC = 2 mA,

f = 200 MHz

fOSC = 230 Mhz (0 dBm),

fout = 30 MHz

2

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