FQA28N50F Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQA28N50F Datasheet PDF : 8 Pages
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Typical Characteristics
102
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
※ Notes :
100
1. 250μ s Pulse Test
2. TC = 25℃
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.5
0.4
VGS = 10V
0.3
V = 20V
GS
0.2
0.1
※ Note : TJ = 25℃
0.0
0
20
40
60
80
100
120
140
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
9000
7500
6000
4500
Ciss
C
oss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
1500
※ Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1.
2.
2V5DS0μ=s50PVulse
Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
DS
V = 250V
10
DS
V = 400V
DS
8
6
4
2
※ Note : ID = 28.4 A
0
0
20
40
60
80
100
120
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001
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