BGD814 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
BGD814 Datasheet PDF : 10 Pages
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NXP Semiconductors
860 MHz, 20 dB gain power doubler
amplifier
Product specification
BGD814
handboo−k,5h0alfpage
CTB
(dB)
−60
MLD345
52
(1)
Vo
(dBmV)
48
handboo−k,4h0alfpage
Xmod
(dB)
−50
MLD346
52
(1)
Vo
(dBmV)
48
−70
44
(2)
−80
(3)
40
(4)
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
−60
44
(2)
(3)
(4)
−70
40
−80
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
−60
handbook, halfpage
CSO
(dB)
−70
−80
MLD347
52
(1)
(2)
Vo
(dBmV)
48
(3)
44
−90
40
(4)
−100
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.4 Composite second order distortion as a
function of frequency under tilted conditions.
2001 Nov 01
5
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