BYW100-200 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
BYW100-200 Datasheet PDF : 5 Pages
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Fig. 3: Thermal resistance versus lead length.
Rth(°C/W)
110
100
Rth(j-a)
90
80
70
60
Rth(j-l)
50
40
30
20
10
Lleads(mm)
0
5
10
15
20
25
BYW100-200
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35µm).
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
δ = 0.2
0.10 δ = 0.1
Single pulse
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig. 5: Forward voltage drop versus forward
current (maximum values).
IFM(A)
50.00
10.00
Tj=100°C
(Typical values)
Tj=25°C
1.00
Tj=100°C
0.10
VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
20
10
F=1MHz
Tj=25°C
5
2
VR(V)
1
1
10
100 200
Fig. 7: Reverse recovery time versus dIF/dt .
trr(ns)
150
100
50
Tj=25°C
Tj=100°C
IF=1.5A
VR=30V
90% confidence
dIF/dt(A/µs)
0
1
10
100
Fig. 8: Peak reverse recovery current versus
dIF/dt.
IRM(A)
2.5
IF=1.5A
VR=30V
2.0
90% confidence
1.5
1.0
0.5
0.0
1
Tj=100°C
Tj=25°C
dIF/dt(A/µs)
10
100
3/5
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