BYW100-200 Ver la hoja de datos (PDF) - STMicroelectronics
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BYW100-200 Datasheet PDF : 5 Pages
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BYW100-200
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient *
* On infinite heatsink with 10mm lead length.
Parameter
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR * Reverse leakage
current
VR = VRRM
Tj = 25°C
Tj = 100°C
VF ** Forward voltage drop IF = 4.5 A
Tj = 25°C
IF = 1.5 A
Tj = 100°C
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
Value
45
Unit
°C/W
Min. Typ. Max. Unit
10
µA
0.5 mA
1.2
V
0.78 0.85
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x IF(AV) + 0.075 IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
tfr
VFP
Qrr
Tests conditions
IF = 1 A dIF/dt = - 50 A/µs VR = 30 V
IF = 1.5 A dIF/dt = -50 A/µs
Measured at 1.1 x VF max.
IF = 1.5 A dIF/dt = -50 A/µs
IF = 1.5 A dIF/dt = -20 A/µs VR ≤ 30 V
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Min. Typ. Max. Unit
35
ns
30
ns
5
V
10
nC
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.2 0.4
δ = 0.05
δ = 0.1
IF(av) (A)
0.6 0.8 1.0
δ = 0.2
δ = 0.5 δ = 1
T
δ=tp/T
tp
1.2 1.4 1.6 1.8
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
1.8
1.6
Rth(j-a)=Rth(j-l)
1.4
1.2
1.0
0.8
Rth(j-a)=100°C/W
0.6
0.4
0.2
0.0
0
Tamb(°C)
25
50
75
100 125 150
2/5
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