BYW100-200RL(2001) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
BYW100-200RL Datasheet PDF : 5 Pages
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BYW100-200
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
PF(av)(W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.2 0.4
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5 δ = 1
T
IF(av) (A)
δ=tp/T
tp
0.6 0.8 1.0 1.2 1.4 1.6 1.8
IF(av)(A)
1.8
1.6
Rth(j-a)=Rth(j-l)
1.4
1.2
1.0
0.8
Rth(j-a)=100°C/W
0.6
0.4
0.2
0.0
0
Tamb(°C)
25
50
75 100 125 150
ct(s) Fig. 3: Thermal resistance versus lead length.
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu) = 35µm).
rodu Rth(°C/W)
110
P 100
Rth(j-a)
90
te 80
le 70
60
Rth(j-l)
so 50
b 40
30
O 20
- 10
Lleads(mm)
) 0
t(s 5
10
15
20
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
δ = 0.2
0.10 δ = 0.1
Single pulse
0.01
25
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
roduc Fig. 5: Forward voltage drop versus forward
current (maximum values).
te P IFM(A)
le 50.00
Obso 10.00
Tj=100°C
(Typical values)
Tj=25°C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
20
10
F=1MHz
Tj=25°C
5
1.00
Tj=100°C
2
VFM(V)
0.10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
1
VR(V)
10
100 200
3/5
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