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BFN39(2007) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
BFN39
(Rev.:2007)
Infineon
Infineon Technologies Infineon
BFN39 Datasheet PDF : 6 Pages
1 2 3 4 5 6
PNP Silicon High-Voltage Transistors
Suitable for video output stages in TV sets
4
and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN38 (NPN)
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BFN39
3
2
1
Type
BFN39
Marking
Pin Configuration
BFN39 1=B 2=C 3=E 4=C -
-
Package
SOT223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
TS 124 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Junction - soldering point2)
Symbol
RthJS
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
300
300
5
200
500
100
200
1.5
150
-65 ... 150
Value
17
Unit
V
mA
W
°C
Unit
K/W
1
2007-03-29

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