STPS1L30A(1999) Ver la hoja de datos (PDF) - STMicroelectronics
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STPS1L30A Datasheet PDF : 5 Pages
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Fig. 4-1: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35µm, recommended
pad layout) (SMB).
Zth(j-a)/Rth(j-a)
1.0
0.8
0.6
0.4
0.2
0.0
1E-2
1E-1
T
tp(s)
1E+0
1E+1
δ=tp/T
tp
1E+2 5E+2
STPS1L30A/U
Fig. 4-2: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35µm, recommended
pad layout) (SMA).
Zth(j-a)/Rth(j-a)
1.0
0.8
0.6
0.4
0.2
0.0
1E-2
1E-1
T
tp(s)
1E+0
1E+1
δ=tp/T
tp
1E+2 5E+2
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0
5
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
VR(V)
10
15
20
25
30
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
500
F=1MHz
Tj=25°C
100
10
1
2
VR(V)
5
10
20 30
Fig. 7-1: Forward voltage drop versus forward cur-
rent (typical values, high level).
IFM(A)
10.00
1.00
Tj=100°C
Tj=150°C
Tj=25°C
VFM(V)
0.10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Fig. 7-2: Forward voltage drop versus forward cur-
rent (maximum values, low level).
IFM(A)
3.0
2.5
2.0
Tj=125°C
Typical values
Tj=150°C
Tj=100°C
1.5
Tj=25°C
1.0
0.5
VFM(V)
0.0
0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
3/5
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