BAV70TT1G(2010) Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

BAV70TT1G
(Rev.:2010)

Dual Switching Diode

ON Semiconductor 

BAV70TT1G

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 mAdc)

Reverse Voltage Leakage Current (Note 3)

(VR = 70 Vdc)

(VR = 50 Vdc)

Diode Capacitance

(VR = 0, f = 1.0 MHz)

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1)

Forward Recovery Voltage

(IF = 10 mAdc, tr = 20 ns) (Figure 2)

3. For each individual diode while the second diode is unbiased.

V(BR)

70

IR

--

IR

--

CD

--

VF

--

--

--

--

trr

--

VRF

--

Max

--

5.0

100

1.5

715

855

1000

1250

6.0

1.75

Unit

Vdc

mAdc

nAdc

pF

mVdc

ns

V

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