PMSTA05 Ver la hoja de datos (PDF) - NXP Semiconductors.
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PMSTA05 Datasheet PDF : 9 Pages
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Nexperia
PMSTA05; PMSTA06
500 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base
cut-off current
PMSTA05
PMSTA06
IEBO
emitter-base
cut-off current
VCB = 60 V; IE = 0 A
VCB = 80 V; IE = 0 A
VEB = 3 V; IC = 0 A
-
-
100 nA
-
-
100 nA
-
-
500 nA
hFE
DC current gain
VCE = 2 V; IC = 10 mA
50
-
VCE = 1 V; IC = 100 mA [1] 50
-
VCEsat collector-emitter
IC = 100 mA;
[1] -
saturation voltage
IB = 10 mA
VBEsat base-emitter
saturation voltage
IC = 100 mA;
IB = 10 mA
[1] -
-
VBE
base-emitter voltage IC = 100 mA; VCE = 1 V
-
-
fT
transition frequency VCE = 2 V; IC = 10 mA;
100 -
f = 100 MHz
-
-
250 mV
900 mV
1.2 V
-
MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
PMSTA05_06
Product data sheet
2.2 1.35
2.0 1.15
2.2
1.8
3
1.1
0.8
0.45
0.15
1
1.3
Dimensions in mm
2
0.4
0.3
Fig 1. Package outline SOT323 (SC-70)
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
0.25
0.10
04-11-04
© Nexperia B.V. 2017. All rights reserved
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