STPR820D Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPR820D Datasheet PDF : 6 Pages
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STPR820D/F/FP
THERMAL RESISTANCES
Symbol
Rth(j-c)
Junction to case
Parameter
TO-220AC
ISOWATT220AC / TO-220FPAC
Value
3.0
5.5
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameters
Test conditions
Min. Typ. Max. Unit
IR *
Reverse leakage current
Tj = 25°C VR = VRRM
50 µA
Tj = 100°C
t(s) VF **
Forward voltage drop
Tj = 125°C
Tj = 125°C
uc Tj = 25°C
rod Pulse test : * tp = 5 ms, δ < 2 %
P t(s) ** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
te c P = 0.78 x IF(AV) + 0.026 x IF2(RMS)
IF = 8 A
IF = 16 A
IF = 16 A
sole rodu RECOVERY CHARACTERISTICS
b P Symbol
- O te trr
Tj = 25°C
t(s) sole tfr
Tj = 25°C
duc Ob VFP
Tj = 25°C
Test conditions
IF = 0.5A
IR = 1A
IF = 1A
VFR = 1.1 x VF max
IF = 1A
Irr = 0.25A
tr = 10 ns
tr = 10 ns
0.6 mA
0.99 V
1.20
1.25
Min. Typ. Max. Unit
30 ns
20
3
V
lete Pro uct(s) - Fig. 1: Average forward power dissipation versus
OObbssoolete Prod average forward current.
Fig. 2: Peak current versus form factor.
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