2SC4495 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
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Fabricante
2SC4495 Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4495
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 20mA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= -0.1A; VCE= 12V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
MIN TYP. MAX UNIT
50
V
0.5
V
100 μA
100 μA
500
40
MHz
30
pF
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