GB50LA120UX Ver la hoja de datos (PDF) - Vishay Semiconductors
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GB50LA120UX Datasheet PDF : 10 Pages
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GB50LA120UX
"Low Side Chopper" IGBT SOT-227 Vishay Semiconductors
(Ultrafast IGBT), 50 A
12
10
Eon
8
6
4
2
Eoff
0
0
10
20
30
40
50
1000
Rg (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 50 A, L = 500 μH,
VCC = 600 V, VGE = 15 V
250
230
210
190
170
150
130
110
90
70
100
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/µs)
Fig. 13 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
40
100
td(off)
td(on)
tf
35
30
25
TJ = 125 °C
20
tr
15
TJ = 25 °C
10
5
10
0
10
20
30
40
50
0
100
1000
Rg (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
IC = 50 A, VGE = 15 V
2650
dIF/dt (A/µs)
Fig. 14 - Typical Irr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
2400
2150
TJ = 125 °C
1900
1650
1400
1150
900
TJ = 25 °C
650
400
100
1000
dIF/dt (A/µs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt, VR = 200 V, IF = 50 A
Document Number: 93102 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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