GB50LA120UX Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
GB50LA120UX Datasheet PDF : 10 Pages
| |||
GB50LA120UX
Vishay Semiconductors "Low Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES) VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 25 A
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 25 A, TJ = 125 °C
VGE = 15 V, IC = 50 A, TJ = 125 °C
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
Temperature coefficient of
threshold voltage
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
Diode reverse breakdown voltage
VBR
IR = 1 mA
IC = 25 A, VGE = 0 V
Diode forward voltage drop
IC = 50 A, VGE = 0 V
VFM
IC = 25 A, VGE = 0 V, TJ = 125 °C
IC = 50 A, VGE = 0 V, TJ = 125 °C
Diode reverse leakage current
VR = VR rated
IRM
TJ = 125 °C, VR = VR rated
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
4
-
-
-
1200
-
-
-
-
-
-
-
TYP.
-
2.46
3.22
2.84
3.78
5
- 10
6
0.7
-
1.99
2.53
1.96
2.66
4
0.6
-
MAX.
-
-
2.80
3.60
3.00
4
-
50
2.0
-
2.42
3.00
2.30
3.08
50
3.0
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
IC = 50 A, VCC = 600 V, VGE = 15 V
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
IC = 50 A, VCC = 600 V,
Eoff
VGE = 15 V, Rg = 5
Etot
L = 500 μH, TJ = 25 °C
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Eon
Eoff
Etot
td(on)
tr
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
Turn-off delay time
td(off)
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
tf
RBSOA
trr
Irr
TJ = 150 °C, IC = 150 A, Rg = 22
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
Diode recovery charge
Qrr
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
Qrr
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
400
43
187
2.72
1.11
3.83
3.94
2.31
6.25
191
53
223
143
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
-
129
161
-
11
14
-
700
1046
-
208
257
-
17
21
-
1768
2698
UNITS
nC
mJ
ns
ns
A
nC
ns
A
nC
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93102
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Jul-10
Share Link: 