DTD114EK Ver la hoja de datos (PDF) - ROHM Semiconductor

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componentes Descripción

Fabricante

DTD114EK

500mA / 50V Digital transistors (with built-in resistors)

ROHM Semiconductor 

Transistors

DTD114EK / DTD114ES

500mA / 50V Digital transistors

(with built-in resistors)

DTD114EK / DTD114ES

zApplications

Inverter, Interface, Driver

zFeature

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input resistors

(see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

3) Only the on / off conditions need to be set for operation,

making the device design easy.

zExternal dimensions (Unit : mm)

DTD114EK

2.9

1.1

0.4

0.8

(3)

ROHM : SMT3

EIAJ : SC-59

(2)

(1)

0.95 0.95

1.9

0.15

(1) GND

(2) IN

(3) OUT

Each lead has same dimensions

Addreviated symbol : F24

DTD114ES

4.0

2.0

zStructure

NPN epitaxial planar silicon transistor

(Resistor built-in type)

zPackaging specifications

Package

SMT3

Packaging type

Code

Taping

T146

Basic ordering

Part No. unit (pieces)

DTD114EK

3000

DTD114ES

−

SPT

Taping

TP

5000

−

ROHM : SPT

EIAJ : SC-72

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

Unit

DTD114EK DTD114ES

Supply voltage

VCC

50

V

Input voltage

VIN

−10 to +40

V

Output current

IC

500

mA

Power dissipation

PD

200

300

mW

Junction temperature

Tj

150

C

Storage temperature

Tstg

−55 to +150

C

0.45

2.5

5.0

(1) (2) (3)

0.5 0.45

(1) GND

(2) OUT

(3) IN

zEquivalent circuit

R1

IN

R2

OUT

GND

IN

GND

R1=10kΩ R2=10kΩ

OUT

Rev.A

1/2

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