BC869 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
componentes Descripción
Fabricante
BC869 Datasheet PDF : 3 Pages
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Production specification
PNP medium power Transistor
BC869
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Collector cut-off current
Emmiter cut-off current
DC current gain
ICBO
VCB=-25V IE=0
VCB=-25V IE=0,Tj=150℃
-100
-10
IEBO
VCE=-5V IC=0
-100
VCE=-10V IC=-5mA
50
VCE=-1V IC=-500mA
BC869
100 375
hFE
BC869-16 100 160
BC869-25 160 375
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
CLASSIFICATION HFE
VCE(sat)
VBE
fT
VCE=-1V IC=-1A
IC=-1A IB=-100mA
IC=-1A ,VCE=-1V
VCE=-5V, IC=-10mA,
f=100MHz
60
-0.5
-1
40
Range
100-375
100-250
160-375
UNIT
nA
μA
nA
V
V
MHz
Marking
CEC
CGC
CHC
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
E067
Rev.A
www.gmicroelec.com
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