KTC3198 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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KTC3198 Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KTC3198 TRANSISTOR（ NPN ）
TO— 92
FEATURE
Power dissipation
PCM : 0.625 W（Tamb=25℃）
Collector current
ICM : 0.15 A
Collector-base voltage
V(BR)CBO : 60
V
Operating and storage junction temperature range
Tstg: -55℃ to +150℃
TJ : 150℃
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100μA ， IE=0
60
UNIT
V
Collector-emitter breakdown voltage V(BR)CEO IC=5 mA , IB=0
50
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA， IC=0
5
Collector cut-off current
ICBO
VCB=60V , IE=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
V
V
0.1 μA
0.1 μA
DC current gain
hFE(1)
hFE(2)
VCE=6 V, IC= 2m A
70
700
VCE=6 V, IC= 150m A
25
100
Collector-emitter saturation voltage
VCE(sat)
IC= 100mA, IB= 10 mA
0.1
0.25
V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC= 100mA, IB= 10 mA
VCE= 10 V, IC= 1mA
80
F=30MHz
1
V
MHz
CLASSIFICATION OF hFE(1)
Rank
O
Range
70-140
Y
120-240
GR
200-400
BL
350-700
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