2N6395 Ver la hoja de datos (PDF) - Digitron Semiconductors
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2N6395 Datasheet PDF : 5 Pages
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DIGITRON SEMICONDUCTORS
2N6394-2N6399
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
(TJ = -40 to +125°C, sine wave, 50 to 60 Hz, gate open)
2N6394
2N6395
2N6397
2N6399
VRRM, VDRM
50
100
Volts
400
800
On state RMS current
(180° conduction angles, TC = 90°C)
IT(RMS)
Amps
12
Peak non-repetitive surge current
(1/2 cycle, 60Hz, sine wave, TJ = 90°C)
Circuit fusing considerations (t = 8.3ms)
ITSM
Amps
100
I2t
40
A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 90ۜ°C)
PGM
20
Watts
Forward average gate power (t = 8.3ms, TC = 90°C)
PG(AV)
0.5
Watts
Forward peak gate current (pulse width ≤ 1.0µs, TC = 90ۜ°C)
IGM
2
Amps
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of
the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RӨJC
Maximum lead temperature for soldering purposes 1/8” from
case for 10 seconds
TL
2.0
°C/W
260
°C
ELECTRICAL CHARACTERISTICS (TC 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 100°C
IDRM or IRRM
ON CHARACTERISTICS
Peak forward on-state voltage (2)
(ITM = 24A peak)
VTM
Gate trigger current (continuous dc)
(VD = 12 Vdc, RL = 100 Ω)
IGT
Gate trigger voltage (continuous dc)
(VD = 12 Vdc, RL = 100 Ω)
VGT
Gate non-trigger voltage
(VD = 12 Vdc, RL = 100 Ω, TJ = 125°C)
VGD
Holding current
(VD = 12Vdc, initiating current = 200mA, gate open)
IH
Turn on time
(ITM = 12A, IGT = 40mAdc, VD = rated VDRM)
tgt
Min.
Typ.
Max.
-
-
10
-
-
2.0
-
1.7
2.2
-
5.0
30
-
0.7
1.5
0.2
-
-
-
6.0
50
-
1.0
2.0
Unit
µA
mA
Volts
mA
Volts
Volts
mA
µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130117
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