Philips Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a supply voltage of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2, 3
common
5
+VB
7, 8
common
9
output
handbook, halfpage
123 5 789
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
Itot
PARAMETER
power gain
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 750 MHz
VB = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Vi
Tstg
Tmb
PARAMETER
RF input voltage
storage temperature
operating mounting base temperature
MIN.
18
18.5
−
MAX.
19
−
435
UNIT
dB
dB
mA
MIN.
−
−40
−20
MAX.
65
+100
+100
UNIT
dBmV
°C
°C
2001 Nov 27
2