BAS81-GS08(2006) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
BAS81-GS08 Datasheet PDF : 5 Pages
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BAS81 / 82 / 83
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
on PC board 50 mm x 50 mm x 1.6 mm
RthJA
320
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 0.1 mA
IF = 1 mA
IF = 15 mA
Reverse current
VR = VRmax
Diode capacitance
VR = 1 V, f = 1 MHz
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
14
12
RthJA = 540 K/W
10
VR = 60 V
8
PRR - Limit at 100 % VRR
6
4
PR - Limit at 80 % VR
2
0
25
50
75
100
125
150
15794
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Symbol
Min
VF
VF
VF
IR
CD
Typ.
Max
Unit
330
mV
410
mV
1000
mV
200
nA
1.6
pF
1000
100
VR = VRRM
10
1
0.1
25
50
75
100
125
150
15795
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
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2
Document Number 85509
Rev. 1.7, 15-Mar-06
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