BU205 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

BU205

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH

V(BR)EBO Emitter-base breakdown votage

IE=10mA; IC=0

VCEsat Collector-emitter saturation voltage IC=2 A;IB=1A

VBEsat Base-emitter saturation voltage

IC=2 A;IB=1A

ICES

Collector cut-off current

VCE=1500V;VBE=0

hFE

DC current gain

IC=2A ; VCE=5V

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

fT

Transition frequency

tf

Fall time

IC=0.1A ; VCE=15V

IC=2A ;IB=1A

LB=10μH

Product Specification

BU205

MIN TYP. MAX UNIT

700

V

5

V

5.0

V

1.5

V

1.0

mA

2

65

pF

7.5

MHz

0.75

μs

2

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