CMPT5401 Ver la hoja de datos (PDF) - Central Semiconductor

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CMPT5401

SURFACE MOUNT PNP SILICON TRANSISTOR

Central Semiconductor 

CMPT5401

SURFACE MOUNT

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5401

type is a PNP silicon transistor manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for high voltage amplifier

applications.

MARKING CODE: C2L

SOT-23 CASE

MAXIMUM RATINGS: (TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

ΘJA

160

150

5.0

600

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=120V

ICBO

IEBO

VCB=120V, TA=100°C

VEB=3.0V

BVCBO

IC=100μA

160

BVCEO

IC=1.0mA

150

BVEBO

IE=10μA

5.0

VCE(SAT)

IC=10mA, IB=1.0mA

VCE(SAT)

IC=50mA, IB=5.0mA

VBE(SAT)

IC=10mA, IB=1.0mA

VBE(SAT)

IC=50mA, IB=5.0mA

hFE

VCE=5.0V, IC=1.0mA

50

hFE

VCE=5.0V, IC=10mA

60

hFE

VCE=5.0V, IC=50mA

50

fT

VCE=10V, IC=10mA, f=100MHz

100

Cob

VCB=10V, IE=0, f=1.0MHz

hfe

VCE=10V, IC=1.0mA, f=1.0kHz

40

NF

VCE=5.0V, IC=250μA, RS=1.0kΩ,

f=10Hz to 15.7kHz

MAX

50

50

50

0.2

0.5

1.0

1.0

240

300

6.0

200

8.0

UNITS

V

V

V

mA

mW

°C

°C/W

UNITS

nA

μA

nA

V

V

V

V

V

V

V

MHz

pF

dB

R6 (1-February 2010)

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