CEM4953H Ver la hoja de datos (PDF) - Chino-Excel Technology
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CEM4953H Datasheet PDF : 4 Pages
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CEM4953H
Dual P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -4.5A, RDS(ON) = 64mΩ @VGS = -10V.
RDS(ON) = 95mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
D1 D1 D2 D2
8765
SO-8
1
1
2
3
4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
-30
VGS
±20
Drain Current-Continuous
Drain Current-Pulsed a
ID
-4.5
IDM
-18
Maximum Power Dissipation
PD
2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.July
http://www.cetsemi.com
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