DTD143EK(2009) Ver la hoja de datos (PDF) - ROHM Semiconductor
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Fabricante
DTD143EK Datasheet PDF : 3 Pages
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DTD143EK
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
Symbol
VI (off)
VI (on)
VO (on)
II
IO (off)
GI
R1
R2 / R1
fT ∗
Min.
−
3
−
−
−
47
3.29
0.8
−
Typ.
−
−
0.1
−
−
−
4.7
1
200
Max.
0.5
−
0.3
1.8
0.5
−
6.11
1.2
−
Unit
V
V
mA
μA
−
kΩ
−
MHz
Conditions
VCC=5V, IO=100μA
VO=0.3V, IO=20mA
IO / II=50mA / 2.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=50mA
−
−
VCE=10V, IE= −50mA, f=100MHz
Electrical characteristic curves
100
VO=0.3V
50
20
10
5
2
1
500m
Ta= −40˚C
25˚C
100˚C
200m
100m
500μ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
10m
5m Ta=100˚C
2m
25˚C
−40˚C
1m
500μ
VCC=5V
200μ
100μ
50μ
20μ
10μ
5μ
2μ
1μ
0
0.5
1.0 1.5
2.0 2.5
3.0
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
Ta=100˚C
200
25˚C
−40˚C
100
50
VO=5V
20
10
5
2
1
500μ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output current
1
500m
lO / lI=20
200m
100m
50m
Ta=100˚C
25˚C
−40˚C
20m
10m
5m
2m
1m
500μ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
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2009.06 - Rev.C
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