BFT92W Ver la hoja de datos (PDF) - NXP Semiconductors.
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BFT92W Datasheet PDF : 14 Pages
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NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT92W
FEATURES
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
APPLICATION
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
handbook, 2 columns
3
BFT92W uses the same crystal as the
SOT23 version, BFT92.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1
Top view
2
MBC870
Marking code: W1.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
Ptot
hFE
Cre
fT
GUM
F
collector-base voltage
open emitter
collector-emitter voltage
open base
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
up to Ts = 93 C; note 1
IC = 15 mA; VCE = 10 V
IC = 0; VCB = 10 V; f = 1 MHz
IC = 15 mA; VCE = 10 V;
f = 500 MHz
maximum unilateral power gain IC = 15 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C
noise figure
IC = 5 mA; VCE = 10 V;
f = 500 MHz
Tj
junction temperature
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
20
TYP.
50
0.5
4
17
2.5
MAX.
20
15
35
300
UNIT
V
V
mA
mW
pF
GHz
dB
dB
150
C
May 1994
2
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