BSP16 Ver la hoja de datos (PDF) - Philips Electronics
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BSP16 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistor
Product specification
BSP16
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
97
K/W
16
K/W
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
IEBO
hFE
VCEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
CONDITIONS
IE = 0; VCB = −280 V
IC = 0; VEB = −6 V
IC = −50 mA; VCE = −10 V
IC = −50 mA; IB = −5 mA
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = −10 mA; VCE = −10 V; f = 100 MHz
MIN.
−
−
30
−
−
15
MAX. UNIT
−100 nA
−100 nA
120
−2
V
15
pF
−
MHz
1999 Apr 28
3
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