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BSP16

PNP high-voltage transistor

Philips Electronics 

Philips Semiconductors

PNP high-voltage transistor

Product specification

BSP16

FEATURES

• High voltage (max. 350 V).

APPLICATIONS

• Switching and amplification

• Especially used in telephony and automotive

applications.

DESCRIPTION

PNP high-voltage transistor in a SOT223 plastic package.

NPN complements: BSP19 and BSP20.

PINNING

PIN

1

2, 4

3

base

collector

emitter

DESCRIPTION

handbook, halfpage

4

2, 4

1

3

1

2

3

Top view

MAM288

Fig.1 Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VCBO

VCEO

VEBO

IC

IB

Ptot

Tstg

Tj

Tamb

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

base current (DC)

total power dissipation

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

open base

open collector

Tamb ≤ 25 °C; note 1

MIN.

−

−

−

−

−

−

−65

−

−65

MAX.

−350

−300

−6

−200

−200

1.28

+150

150

+150

UNIT

V

V

V

mA

mA

W

°C

°C

°C

Note

1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated

Handbook”.

1999 Apr 28

2

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