TIP36B Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
TIP36B Datasheet PDF : 3 Pages
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1
°C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEO Collector Cut-off
Current (IB = 0)
VCE = 60 V
IEBO Emitter Cut-off Current VEB = 5 V
(Ic = 0)
ICES Collector Cut-off
Current (VBE = 0)
VCE = Rated VCEo
VcEO(sus)* Collector-Emitter
Sustaining Voltage
(Is = 0)
Ic = 30 mA
for TIP36B
for TIP35C/36C
HFE' DC Current Gain
IC = 1.5A
IC=15A
VcE= 4 V
VCE = 4V
VcE(sat)* Collector-Emitter
Saturation Voltage
IC=15A
lc = 25A
IB=1.5A
IB = 5A
Vse(on)* Base-Emitter Voltage lc = 15A
Ic = 25 A
VCE = 4 V
VCE = 4 V
fy
Transition Frequency |c = 1 A VCE = 10 V f = 1 MHz
hfe Small Signal Current | c = 1 A
Gain
* Pulsed: Pulse duration = 300 jis, duty cycle £ 2 %
For PNP types voltage and current values are negative.
VCE = 10 V f = 1 KHz
Min. Typ.
80
100
25
10
3
25
Max.
1
1
0.7
50
1.8
4
2
4
Unit
mA
mA
mA
V
V
V
V
V
MHz
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