IXFN55N50F Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFN55N50F Datasheet PDF : 2 Pages
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IXFN 55N50F
Symbol
gfs
C
iss
Coss
C
rss
td(on)
t
r
td(off)
t
f
Q
g(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
22
33
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
6700
pF
1250
pF
330
pF
24
ns
V = 10 V, V = 0.5 • V , I = 0.5 • I
20
ns
GS
DS
DSS D
D25
RG = 1 Ω (External),
45
ns
9.6
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
195
nC
50
nC
95
nC
0.21 K/W
0.05
K/W
Source-Drain Diode
Symbol
I
S
Test Conditions
V =0V
GS
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
55 A
I
Repetitive;
SM
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 50A, -di/dt = 100 A/µs, VR = 100 V
QRM
IRM
220 A
1.5 V
250 ns
1.6
µC
13
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.09
4.29
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.72
4.42
4.85
24.59
-0.05
25.07
0.1
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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