2SC4135 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SC4135

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SC4135

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 1.0A; IB= 0.1A

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10uA; IC= 0

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE

DC Current Gain

IC= 0.1A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product IC= 0.1mA; VCE= 10V

MIN TYP. MAX UNIT

0.4

V

1.2

V

100

V

6

V

100 nA

100 nA

100

400

16

pF

120

MHz

 hFE Classifications

R

S

T

100-200 140-280 200-400

isc website：www.iscsemi.com

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