MJD2955 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

MJD2955

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

1000

100

VCE=-2V

10

1

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

10

1

0.1

0.01

-0.01

VCC=-30V

IC=10IB

IB1=IB2

tR

tD

VBE(off)=5V

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 3. Turn On Time

-100

-10

-1

DC5m1ms s 5001µ0s0µs

-0.1

-0.01

-0.1

-1

-10

-100

VCE[V], COLLECTOR EMITTER VOLTAGE

Figure 5. Safe Operating Area

©2001 Fairchild Semiconductor Corporation

-10

VBE(sat)

-1

-0.1

VCE(sat)

IC=10IB

-0.01

-0.1

-1

-10

-100

IC[A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10

VCC=-30V

IC=10IB

IB1=IB2

1

tSTG

tF

0.1

0.01

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 4. Turn Off Time

25

20

15

10

5

0

0

25

50

75

100

125

150

175

TC[oC], CASE TEMPERATURE

Figure 6. Power Derating

Rev. A2, June 2001

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