MJD2955 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
MJD2955 Datasheet PDF : 6 Pages
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MJD2955 / MJD3055
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
6.25
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX
ICBO
Collector Cut-off
VCE = 70 V
Current (VBE = -1.5 V) VCE = 70 V
Collector Cut-off
Current (IE = 0)
VCB = 70 V
VCB = 70 V
Tj = 150 oC
Tj = 150 oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VBE(on)∗ Base-Emitter Voltage
hFE∗ DC Current Gain
VCE = 30 V
VEB = 5 V
IC = 30 mA
IC = 4 A
IC = 10 A
IC = 4 A
IC = 4 A
IC = 10 A
IB = 0.4 A
IB = 3.3 A
VCE = 4 V
VCE = 4 V
VCE = 4 V
fT
Transition Frequency IC = 0.5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
VCE = 10 V f = 500 KHz
Min.
60
20
5
2
Typ.
Max.
20
2
20
2
50
0.5
1.1
8
1.8
100
Unit
µA
mA
µA
mA
µA
mA
V
V
V
V
MHz
Safe Operating Area
Derating Curves
2/6
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