IRF122 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
IRF122 Datasheet PDF : 3 Pages
| |||
IRF120-123/IRF520-523
MTP10N08/10N10
Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Win
Max
Unit
On Characteristics
VGS(UI)
Gate Threshold Voltage
IRF120-123/IRF520-523
V
2.0
4.0
MTP10N08/10N10
2.0
4.5
RDS(on) Static Drain-Source On-Resistance2
n
IRF120/121/520/521
0.30
MTP10N08/10N10
0.33
IRF122/123/522/523
0.40
VDS(on)
Drain-Source On-Voltage2
MTP 10N08/10N10
4.0
V
3.3
V
9ls
Forward Transconductance
1.5
Dynamic Characteristics
Mss
Input Capacitance
600
Coss
Output Capacitance
400
Crss
Reverse Transfer Capacitance
100
Switching Characteristics (Tc = 25°C, Figures 1, 2)3
td(on)
t,
Turn-On Delay Time
Rise Time
40
^ 70
td(oH)
Turn-Off Delay Time
100
t(
Fall Time
70
Q8
Total Gate Charge
15
S (U)
PF
pF
pF
ns
ns
ns
ns
nC
Symbol
Characteristic
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF120/121/520/521
IRF122/123/522/523
tn-
Reverse Recovery Time
Typ
Max
Unit
2.5
V
2.3
V
280
ns
Notes
1. Tj - +25'O to +150'C
2. Pulse width limited by Tj
3. Switching time measurements performed on LEM TR-5B test equipment.
Test Conditions
ID = 250 MA, VDS = VQS
ID = 1 mA, VDS = VGS
VGS -10 V
ID = 4.0 A
ID = 5.0 A
ID = 4.0 A
VGS =10 V; ID -10.0 A
VQS = 10 V, ID = 5.0 A
T0= 100-C
VDs = 10 V, ID= 4.0 A
VDS = 25 V, VGS = o v
f - 1.0 MHz
VDD = 50 V, ID = 4.0 A
VQS= 10 V, RGEN = 50 a
RGS = 50 n
VGS -10 v, ID= 10 A
VDD =• 50 V
Test Conditions
ls = 8.0 A; VGS = 0 V
ls - 7.0 A; VGS = 0 V
ls - 4.0 A; dls/dt - 25 A/MS
Share Link: 