IRF520 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
IRF520 Datasheet PDF : 9 Pages
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symb ol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 50 V ID = 5 A
RGS = 4.7 Ω VGS = 10 V
(see test circuit)
ID = 10 A VGS = 10 V
VDD = Max Rating x 0.8
(see test circuit)
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 10 A VGS = 0
trr
Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 10 A
VDD = 20 V
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
IRF520/FI
Min.
Typ.
10
50
25
20
15
7
4
Max.
15
75
40
30
25
Unit
ns
ns
ns
ns
nC
nC
nC
Min.
Typ.
Max.
10
40
Unit
A
A
1.6
V
80
ns
0. 22
µC
Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
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