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Fabricante

BC393

HIGH VOLTAGE AMPLIFIER

STMicroelectronics 

BC393

THERMAL DATA

Rth j-cas e Thermal Resistance Junction-case

R th j-amb Thermal Resistance Junction-ambient

Max

125

Max

440

°C/W

°C/W

ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

ICB O

Collector Cutoff Current

(IE = 0)

V(BR) CBO

V(BR) CEO*

V(BR) EBO

V CE (s at ) *

Collector-base Breakdown

Voltage (IE = 0 )

Collector-emitter Breakdown

Voltage (IB = 0 )

Emiter-base Breakdown

Voltage (IC = 0 )

Collector-emitter Saturation

Voltage

VBE ( sat) * Base-emitter Saturation

Voltage

h F E * DC Curent Gain

fT

C CBO

Transition frequency

Collector-base

Capacitance

VCB = – 100 V

VCB = – 100 V T amb = 150 °C

IC = – 10 µA

IC = – 2 mA

IE = – 10 µA

IC = – 10 mA IB = – 1 mA

IC = – 50 mA IB = – 5 mA

IC = – 10 mA

IC = – 50 mA

IC = – 1 mA

IC = – 10 mA

I C = – 10 mA

IB = – 1 mA

IB = – 5 mA

VCE = – 10 V

VCE = – 10 V

VCE = – 10 V

IE = 0

f = 1 MHz

VCB = – 10 V

* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.

Min. Typ. Max.

50

50

– 180

– 180

–6

– 100 – 300

– 230

– 750 – 900

– 850

85

50

100

50

95

4

7

DC Current Gain.

Collector-emitter Saturation Voltage.

Unit

nA

µA

V

V

V

mV

mV

mV

mV

MHz

pF

2/5

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