BU208D Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

BU208D

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU208D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0

700

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A

VBE(sat) Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 4.5A; IB= 2A

VCE= 1500V; VBE= 0

VCE= 1500V; VBE= 0; TC= 125℃

VEB= 5.0V; IC= 0

1.0

V

1.3

V

1.0

2.0

mA

300 mA

hFE

DC Current Gain

IC= 1A; VCE= 5V

8

fT

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 5V; ftest= 5MHz

VECF

C-E Diode Forward Voltage

IF= 4A

7

MHz

2

V

Switching Times( Inductive load)

ts

Storage Time

tf

Fall Time

IC= 4.5A; IB= 1.8A; LB= 3μH;

VCC= 140V, LC= 0.9mH

7

μs

0.55

μs

isc Website：www.iscsemi.cn

2

Share Link: