FQA160N08 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQA160N08 Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
102
5.0 V
Bottom : 4.5 V
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
101
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
20
VGS = 10V
15
VGS = 20V
10
5
※ Note : TJ = 25℃
0
0
200
400
600
800
1000
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss
gd
Ciss
C
oss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
175℃
101
25℃
100
10-1
2
-55℃
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
175℃
10-1
0.2
0.4
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 40V
8
V = 64V
DS
6
4
2
※ Note : ID = 160A
0
0
40
80
120
160
200
240
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, September 2000
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