CMPSH-3S Ver la hoja de datos (PDF) - Diode Semiconductor Korea

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Fabricante

CMPSH-3S

Schottky Barrier diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

Schottky Barrier diode

CMPSH-3/A/C/S

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Reverse Breakdown Voltage

Forward voltage

Reverse current

Diode Capacitanc

Reverse Recovery Time

Symbol

V(BR)

VF1

VF2

VF3

Min.

30

IR

CD

Typ.

0.29

0.40

0.74

90

25

7.0

Max.

0.33

0.45

1.00

500

100

trr

5

Unit

V

V

V

V

nA

μA

pF

ns

Conditions

IR=100μA

IF=2.0mA

IF=15mA

IF=100mA

VR=25V

VR=25V TA=100℃

VR=1V,f=1MHz

IF=IR=10mA

Irr=0.1XIR,RL=100Ω

PACKAGE OUTLINE

Plastic surface mounted package

SOT-23

SOT-23

Dim

Min

Max

A

2.85

2.95

B

1.25

1.35

C

1.0Typical

D

0.37

0.43

E

0.35

0.48

G

1.85

1.95

H

0.02

0.1

J

0.1Typical

K

2.35

2.45

All Dimensions in mm

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